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Creators/Authors contains: "Alam, Md Tahmidul"

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  1. ; ; ; ; (, Applied Physics Express)
    Abstract 3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm2). The breakdown voltage was optimized with two field plates on either side of the transistor. Shorter first field plate lengths (≤2 μm) resulted in higher breakdown voltage and the possible reason was discussed. The transistors had a steep subthreshold swing of 92 mV dec−1. The fabricated transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage—on resistance, that showed crucial progress. 
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  2. ; ; ; ; ; ; ; (, Applied Physics Express)
    Abstract High voltage (∼2 kV) Al0.64Ga0.36N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm2). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si3N4surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress. 
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  3. ; ; ; ; (, IEEE Transactions on Electron Devices)
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  4. ; ; ; ; ; ; ; ; ; (, IEEE Electron Device Letters)
    Free, publicly-accessible full text available November 1, 2026